Showing results 11 to 18 of 18
Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors Chang, Kee-Joo; Ryu, B.; Noh, H.-K.; Choi, E.-A., 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, ACCMS, 2011-03 |
Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 |
Stability and segregation of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04 |
Stability of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02 |
Stability of boron dopants near the interface between Si and amorphous SiO2 Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation v. no. , ACCMS , 2011-03 |
The atomic and electronic structure of O-vacancy in amorphous In-Ga-Zn-O semiconductors Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11 |
The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07 |
The role of O-vacancy in Negative Bias Illumination Stress Instability in amoprhous In-Ga-Zn-O TFTs Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2010-10 |
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