Browse "College of Natural Sciences(자연과학대학)" by Title
Showing results 15881 to 15900 of 28139
| Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society , 2011-04 |
| Origin of easy-axis reorientationa in Ni/Pd nanomultilayers upon Ar sputtering pressure 정종률; 신성철, 한국 물리학회 춘계논문발표회, 한국물리학회, 2000 |
| Origin of Enhanced Dihydrogen-Metal Interaction in Carboxylate Bridged Cu(2)-Paddle-Wheel Frameworks Kim, Yong-Hyun; Kang, J; Wei, SH, PHYSICAL REVIEW LETTERS, v.105, no.23, 2010-12 |
| Origin of extraordinary luminescence shift in graphene quantum dots with varying excitation energy: An experimental evidence of localized sp(2) carbon subdomain Jang, Minho; Song, Sung Ho; Ha, Hyun Dong; Seo, Tae Seok; Jeon, Seokwoo; Cho, Yong-Hoon, CARBON, v.118, pp.524 - 530, 2017-07 |
| Origin of ferromagnetism in Fe- and Cu-codoped ZnO Shim, JH; Hwang, T; Lee, Soonchil; Park, JH; Han, SJ; Jeong, YH, APPLIED PHYSICS LETTERS, v.86, pp.343 - 345, 2005-02 |
| Origin of gate hysteresis in carbon nanotube field-effect transistors Lee, JS; Ryu, S; Yoo, K; Choi, Insung; Yun, WS; Kim, J, JOURNAL OF PHYSICAL CHEMISTRY C, v.111, no.34, pp.12504 - 12507, 2007-08 |
| Origin of High-Tc Ferromagnetism in Isovalent-Doped III-V Semiconductors Zhang, Peng; Kim, Yong-Hyun; Wei, Su-Huai, PHYSICAL REVIEW APPLIED, v.11, no.5, pp.054058, 2019-05 |
| Origin of perpendicular magnetic anisotropy in Ni/Pd multilayer films Jeong, JR; Kim, YS; Shin, Sung-Chul, Conference Magnetism and Magnetic Materials, Magnetism and Magnetic Materials, 1998 |
| Origin of Perpendicular Magnetic Anisotropy in Ni/Pt Multilayers Kim, YS; Shin, Sung-Chul, Polish-Korean Joint Seminar on Physical Properties of Magnetic Materials, 1998 |
| Origin of Short Period Oscillation near GaAs Band-Gap Energy in Photoreflectance Kim, Jae Eun, SOLID STATE COMMUNICATIONS, v.102, no.4, pp.283 - 286, 1997-01 |
| Origin of Short Period Oscillation Near GaAs Bandgap Eenrgy in Photoreflectance Kim, Jae Eun; Park, Hae Yong, Int. Symp. on Compound Semiconductors, pp.905 - 908, 1997-01-01 |
| Origin of Size Dependency in Coherent-Twin-Propagation-Mediated Tensile Deformation of Noble Metal Nanowires Seo, Jong-Hyun; Park, Harold S.; Yoo, Youngdong; Seong, Tae-Yeon; Li, Ju; Ahn, Jae-Pyoung; Kim, Bongsoo; et al, NANO LETTERS, v.13, no.11, pp.5112 - 5116, 2013-11 |
| Origin of spatial variations in atomic-scale thermopower profiles 백승일; 신의철; 김용현, 제 19회 고등과학원 전자구조계산학회, 고등과학원, 2023-07-13 |
| Origin of stress and enhanced carrier transport in solution-cast organic semiconductor films Cour, Ishviene; Chinta, Priya V.; Schlepuetz, Christian M.; Yang, Yongsoo; Clarke, Roy; Pindak, Ron; Headrick, Randall L., JOURNAL OF APPLIED PHYSICS, v.114, no.9, 2013-09 |
| Origin of Supramolecular Chirality : Molecular Chirality vs. Circularly Polarized Light 강준수; 서명은, 제1회 멀티스케일 카이랄 구조체 연구센터 워크숍, 멀티스케일 카이랄 구조체 연구센터, 2019-01-08 |
| ORIGIN OF THE 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED POROUS SILICON Shin, JungHoon; VANDENHOVEN, GN; POLMAN, A, APPLIED PHYSICS LETTERS, v.66, no.18, pp.2379 - 2381, 1995-05 |
| Origin of the Diverse Melting Behaviors of Aluminum Nanoclusters with Around 55 Atoms Kim, Yong-Hyun; Joongoo Kang; Su-Huai Wei, American Physical Society 2011 March Meeting, American Physical Society, 2011-03-24 |
| Origin of the Diverse Melting Behaviors of Intermediate-Size Nanoclusters: Theoretical Study of Al(N) (N=51-58, 64) Kang, J; Wei, SH; Kim, Yong-Hyun, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.132, no.51, pp.18287 - 18291, 2010-12 |
| Origin of the hole gas in Ge/Si core-shell nanowires Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, Kee-Joo, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04 |
| Origin of the Stability and Transition from Anionic to Cationic Surface Ligand Passivation of All-Inorganic Cesium Lead Halide Perovskite Nanocrystals Yoo, Dongsuk; Woo, Ju Young; Kim, Youngsik; Kim, Sun Won; Wei, Su-Huai; Jeong, Sohee; Kim, Yong-Hyun, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.11, no.3, pp.652 - 658, 2020-02 |
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