Unconventional Hanle effect in a highly ordered CoFe/MgO/n-Si contact: non-monotonic bias and temperature dependence and sign inversion of the spin signal

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We report in this paper the unconventional bias and temperature dependence of the Hanle effect in a highly ordered CoFe/MgO/n-Si contact investigated by means of a three-terminal Hanle method. The spin signal and the effective spin lifetime obtained in this system show non-monotonic behavior with bias and temperature variations. Interestingly, the sign of the spin signal changes significantly with the bias voltage at a low temperature. The sign inversion is presumably ascribed to the contribution of interfacial resonant states formed at the CoFe/MgO interface or bound states in the Si surface during the spin extraction process.
Publisher
IOP PUBLISHING LTD
Issue Date
2012-02
Language
English
Article Type
Article
Keywords

METAL/TUNNEL BARRIER CONTACT; INJECTION; SILICON; SEMICONDUCTOR; POLARIZATION; SPINTRONICS; TRANSPORT

Citation

NEW JOURNAL OF PHYSICS, v.14

ISSN
1367-2630
DOI
10.1088/1367-2630/14/2/023014
URI
http://hdl.handle.net/10203/101750
Appears in Collection
RIMS Journal Papers
Files in This Item
000302304700004.pdf(1.65 MB)Download
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