Unconventional Hanle effect in a highly ordered CoFe/MgO/n-Si contact: non-monotonic bias and temperature dependence and sign inversion of the spin signal

Cited 11 time in webofscience Cited 0 time in scopus
  • Hit : 657
  • Download : 962
DC FieldValueLanguage
dc.contributor.authorJeon, Kun-Rokko
dc.contributor.authorMin, Byoung-Chulko
dc.contributor.authorShin, Il-Jaeko
dc.contributor.authorPark, Chang-Yupko
dc.contributor.authorLee, Hun-Sungko
dc.contributor.authorJo, Young-Hunko
dc.contributor.authorShin, Sung-Chulko
dc.date.accessioned2013-03-12T08:15:52Z-
dc.date.available2013-03-12T08:15:52Z-
dc.date.created2012-06-15-
dc.date.created2012-06-15-
dc.date.issued2012-02-
dc.identifier.citationNEW JOURNAL OF PHYSICS, v.14-
dc.identifier.issn1367-2630-
dc.identifier.urihttp://hdl.handle.net/10203/101750-
dc.description.abstractWe report in this paper the unconventional bias and temperature dependence of the Hanle effect in a highly ordered CoFe/MgO/n-Si contact investigated by means of a three-terminal Hanle method. The spin signal and the effective spin lifetime obtained in this system show non-monotonic behavior with bias and temperature variations. Interestingly, the sign of the spin signal changes significantly with the bias voltage at a low temperature. The sign inversion is presumably ascribed to the contribution of interfacial resonant states formed at the CoFe/MgO interface or bound states in the Si surface during the spin extraction process.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectMETAL/TUNNEL BARRIER CONTACT-
dc.subjectINJECTION-
dc.subjectSILICON-
dc.subjectSEMICONDUCTOR-
dc.subjectPOLARIZATION-
dc.subjectSPINTRONICS-
dc.subjectTRANSPORT-
dc.titleUnconventional Hanle effect in a highly ordered CoFe/MgO/n-Si contact: non-monotonic bias and temperature dependence and sign inversion of the spin signal-
dc.typeArticle-
dc.identifier.wosid000302304700004-
dc.identifier.scopusid2-s2.0-84863173578-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.publicationnameNEW JOURNAL OF PHYSICS-
dc.identifier.doi10.1088/1367-2630/14/2/023014-
dc.contributor.localauthorShin, Sung-Chul-
dc.contributor.nonIdAuthorMin, Byoung-Chul-
dc.contributor.nonIdAuthorShin, Il-Jae-
dc.contributor.nonIdAuthorJo, Young-Hun-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMETAL/TUNNEL BARRIER CONTACT-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusTRANSPORT-
Appears in Collection
RIMS Journal Papers
Files in This Item
000302304700004.pdf(1.65 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 11 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0