DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Kun-Rok | ko |
dc.contributor.author | Min, Byoung-Chul | ko |
dc.contributor.author | Shin, Il-Jae | ko |
dc.contributor.author | Park, Chang-Yup | ko |
dc.contributor.author | Lee, Hun-Sung | ko |
dc.contributor.author | Jo, Young-Hun | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2013-03-12T08:15:52Z | - |
dc.date.available | 2013-03-12T08:15:52Z | - |
dc.date.created | 2012-06-15 | - |
dc.date.created | 2012-06-15 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | NEW JOURNAL OF PHYSICS, v.14 | - |
dc.identifier.issn | 1367-2630 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101750 | - |
dc.description.abstract | We report in this paper the unconventional bias and temperature dependence of the Hanle effect in a highly ordered CoFe/MgO/n-Si contact investigated by means of a three-terminal Hanle method. The spin signal and the effective spin lifetime obtained in this system show non-monotonic behavior with bias and temperature variations. Interestingly, the sign of the spin signal changes significantly with the bias voltage at a low temperature. The sign inversion is presumably ascribed to the contribution of interfacial resonant states formed at the CoFe/MgO interface or bound states in the Si surface during the spin extraction process. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | METAL/TUNNEL BARRIER CONTACT | - |
dc.subject | INJECTION | - |
dc.subject | SILICON | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | POLARIZATION | - |
dc.subject | SPINTRONICS | - |
dc.subject | TRANSPORT | - |
dc.title | Unconventional Hanle effect in a highly ordered CoFe/MgO/n-Si contact: non-monotonic bias and temperature dependence and sign inversion of the spin signal | - |
dc.type | Article | - |
dc.identifier.wosid | 000302304700004 | - |
dc.identifier.scopusid | 2-s2.0-84863173578 | - |
dc.type.rims | ART | - |
dc.citation.volume | 14 | - |
dc.citation.publicationname | NEW JOURNAL OF PHYSICS | - |
dc.identifier.doi | 10.1088/1367-2630/14/2/023014 | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Min, Byoung-Chul | - |
dc.contributor.nonIdAuthor | Shin, Il-Jae | - |
dc.contributor.nonIdAuthor | Jo, Young-Hun | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METAL/TUNNEL BARRIER CONTACT | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | SPINTRONICS | - |
dc.subject.keywordPlus | TRANSPORT | - |
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