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Showing results 1 to 9 of 9

1
A New Sensing Metric to Reduce Data Fluctuations in a Nanogap-Embedded Field-Effect Transistor Biosensor

Kim, Chang-Hoon; Ahn, Jae-Hyuk; Lee, Kyung-Bok; Jung, Cheul-Hee; Park, Hyun-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.10, pp.2825 - 2831, 2012-10

2
Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

Choi, Ji-Min; Han, Jin-Woo; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.12, pp.3477 - 3484, 2010-12

3
Analytical threshold voltage model for double-gate MOSFETs with localized charges

Kang, Hongki; Han, Jin-Woo; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.29, no.8, pp.927 - 930, 2008-08

4
Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized Charges

Woo, Jong-Ho; Choi, Ji-Min; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.9, pp.2951 - 2955, 2013-09

5
Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery

Jeong, Yonghee; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, JOURNAL OF ELECTRONIC MATERIALS, v.52, no.6, pp.3914 - 3920, 2023-06

6
LOOKUP TABLE-BASED ADAPTIVE BODY BIASING OF MULTIPLE MACROS FOR PROCESS VARIATION COMPENSATION AND LOW LEAKAGE

Choi, B; Shin, Youngsoo, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, v.19, no.7, pp.1449 - 1464, 2010-11

7
Photoactive Memory by a Si-Nanowire Field-Effect Transistor

Kim, Chung-Jin; Choi, Sung-Jin; Ahn, Jae-Hyuk; Han, Jin-Woo; Kim, Ho-Yeon; Yoo, Seung-Hyup; Choi, Yang-Kyu, ACS NANO, v.6, no.2, pp.1449 - 1454, 2012-02

8
Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Duarte, Juan P.; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.125 - 127, 2011-02

9
Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and asymmetric structure

Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.6, pp.1472 - 1479, 2008-06

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