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Showing results 1 to 3 of 3

1
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.840 - 847, 2013-02

2
High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal

Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06

3
Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09

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