High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal

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In this article, we report the fabrication of Zr-rich high-k ferroelectric hafnium zirconium oxide (HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent oxide thickness (EOT) of 5.7 angstrom and remanent polarization (P-r) of similar to 16 mu C/cm(2). High-k value and low EOT was achieved by utilizing multiphase region of HZO as well as high pressure post metallization annealing (HPPMA). Despite the high-k value of Zr-rich HZO films, the emergence of multiphase region at higher physical thickness when annealed using rapid thermal annealing (RTA) limits its EOT value. On the contrary, multiphase emerges at a smaller physical thickness in HPPMA due to the formation of more o-phase as revealed by grazing incidence X-ray diffractometer (GIXRD). The smaller physical thickness of HPPMA together with the demonstration of significantly higher dielectric constant (>50) by HZO in the vicinity of multiphase, was therefore, found to be very effective in reducing the EOT.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-06
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494

ISSN
0018-9383
DOI
10.1109/TED.2020.2985635
URI
http://hdl.handle.net/10203/275357
Appears in Collection
EE-Journal Papers(저널논문)
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