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Showing results 1 to 6 of 6

1
Density functional calculations of the Schottky barrier height and effective work function in Ni/oxide interfaces

Noh, HK; Oh, YJ; Chang, Kee-Joo, 2012 APS March Meeting, APS, 2012-02

2
Electronic structure of O-vacancy in high-k dielectrics and oxide semiconductors

Chang, Kee-Joo; Noh, HK; Oh, YJ, MRS Spring, Moscone West and San Francisco Marriott, MRS, 2011-04

3
Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks

Noh, HK; Oh, Y. J.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011

4
Segregation and diffusion of boron dopants in the Si/SiO2 interface

Oh, YJ; Noh, HK; Kim, GM; Chang, Kee-Joo, 2012 APS March Meeting, APS, 2012-02

5
The effect of O-vacancy defects on device instability in amorphous In-Ga-Zn-O thin film transistors

Noh, HK; Ryu, B.; Chang, Kee-Joo, 15th International Symposium on the Physics of Semiconductors and Applications, ISPSA, 2011-07

6
Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors

Chang, Kee-Joo; Ryu, B.; Noh, HK, 15th International Symposium on the Physics of Semiconductors and Applications, ISPSA, 2011-07

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