DSpace at KOASAS: Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors

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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors

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Chang, Kee-Joo researcher / Ryu, B. / Noh, HK

Publisher: ISPSA

Issue Date: 2011-07

Language: ENG

Citation: 15th International Symposium on the Physics of Semiconductors and Applications

URI: http://hdl.handle.net/10203/168507

Appears in Collection: PH-Conference Papers(학술회의논문)

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Understanding the origin of device instability in amorphous oxide semiconductor thin film transistors

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