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Showing results 1 to 9 of 9

1
Dependence of Plasma-Induced Oxide Charging Current on Al Antenna Geometry

H. Shin; C. Hu, IEEE ELECTRON DEVICE LETTERS, v.13, no.12, pp.600 - 602, 1992-12

2
Infinite Lorentz boost along the M-theory circle and nonasymptotically flat solutions in supergravities

S. Hyun; Kiem, Youngjai; H. Shin, PHYSICAL REVIEW D, v.57, no.8, pp.4856 - 4861, 1998-04

3
Modeling Oxide Thickness Dependence of Charging Damage by Plasma Processing

H. Shin; K. Noguchi; C. Hu, IEEE ELECTRON DEVICE LETTERS, v.14, no.11, pp.509 - 511, 1993-11

4
Monitoring Plasma Induced-Damage in Thin Oxide

H. Shin; C. Hu, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, v.6, no.2, pp.96 - 102, 1993-05

5
Plasma Etching Antenna Effect on Oxide-Silicon Interface Reliability

H. Shin; C. Hu, SOLID-STATE ELECTRONICS, v.36, no.9, pp.1356 - 1358, 1993-02

6
Plasma Etching Charge-up Damage to Thin Oxides

H. Shin; N. jha; X. Y. Qian; G. W. Hills; C. Hu, SOLID STATE TECHNOLOGY, v.36, no.8, pp.29 - 36, 1993-08

7
Spatial Distribution of Thin Oxide Changing in Reactive Ion Etcher and MERIE Etcher

H. Shin; K. Noguchi; X. Y. Qian; N. jha; G. W. Hills; C. Hu, IEEE ELECTRON DEVICE LETTERS, v.14, no.2, pp.88 - 90, 1993-02

8
Thin Film Silicon on Insulator on Insulator Substractes and Their Application to Integrated Circuits

S. R. Wilson; T. Wetteroth; S. Hong; H. Shin; B-Y. Hwang; J. Foerstner; M. Racanelli; et al, JOURNAL OF ELECTRONIC MATERIALS, v.25, no.1, pp.13 - 21, 1996-01

9
Thin Oxide Charging Current During Plasma Etching of Aluminum

H. Shin; C.-C King; T. Horiuchi; C. Hu, IEEE ELECTRON DEVICE LETTERS, v.12, no.8, pp.404 - 406, 1991-08

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