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Showing results 1 to 3 of 3

1
ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES

Lee, Hee Chul; ASANO, T; ISHIWARA, H; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.27, no.9, pp.1616 - 1625, 1988-09

2
FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS

ASANO, T; ISHIWARA, H; Lee, Hee Chul; TSUTSUI, K; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141, 1986-02

3
OPTIMIZATION OF THE GROWTH-CONDITIONS OF HETEROEPITAXIAL GAAS FILMS ON CAF2/SI STRUCTURES

Lee, Hee Chul; ASANO, T; ISHIWARA, H; FURUKAWA, S, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.7, pp.595 - 597, 1986-07

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