FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS

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Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1986-02
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.25, no.2, pp.139 - 141

DOI
10.1143/JJAP.25.L139
URI
http://hdl.handle.net/10203/64584
Appears in Collection
EE-Journal Papers(저널논문)
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