DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Byung-Ki | ko |
dc.contributor.author | Noh, Hyeon-Kyun | ko |
dc.contributor.author | Choi, Eun-Ae | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-11T18:29:21Z | - |
dc.date.available | 2013-03-11T18:29:21Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.97, no.2, pp.022108 - 022108 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/99911 | - |
dc.description.abstract | We find that O-vacancy (V(O)) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by V(O) in the dielectrics. While some of V(O)(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that V(O)(+2) can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464964] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000279999800033 | - |
dc.identifier.scopusid | 2-s2.0-77955160907 | - |
dc.type.rims | ART | - |
dc.citation.volume | 97 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 022108 | - |
dc.citation.endingpage | 022108 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3464964 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | ENERGY | - |
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