Effect of VI/II Gas Ratio on the Epitaxial Growth of ZnO Films by Metalorganic Chemical Vapor Deposition

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We report the effect of the VI/II ratio on the metalorganic chemical vapor deposition (MOCVD) growth of ZnO film. The surface of ZnO film becomes very smooth as the VI/II ratio increases. Atomic force microscopy measurement shows that ZnO films grown at a VI/II ratio of 25,000 have atomically flat terraces with a root-mean-square roughness of 0.2 nm. Low-temperature photoluminescence spectra also reveal a very sharp excitonic emission comprised of a neutral donor bound exciton emission and a free exciton emission with first and second longitudinal optical (LO) phonon replicas, indicating that the ZnO epilayer is of a high optical quality. (C) 2011 The Japan Society of Applied Physics
Publisher
JAPAN SOC APPLIED PHYSICS
Issue Date
2011-10
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING-DIODES; THIN-FILMS; MOCVD; EMISSION; DEVICES

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.10

ISSN
0021-4922
URI
http://hdl.handle.net/10203/95323
Appears in Collection
PH-Journal Papers(저널논문)
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