Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties

Cited 2 time in webofscience Cited 0 time in scopus
  • Hit : 287
  • Download : 0
In-rich InGaN/GaN nanostructures such as quantum wells (QWs) and quantum dots (QDs) were successfully grown by metal-organic chemical vapor deposition and their optical properties were investigated. Introduction of a relatively high growth temperature made it possible to grow In-rich InGaN/GaN QWs and growth interruption (GI) was effectively used to control their structural and optical properties. From In-rich InGaN/GaN QW structures grown without GI, enhanced thermal stability appeared in optical properties and thickness fluctuation in In-rich InGaN QWs could give intrinsic QD-like carrier localization centers. To enhance thermal characteristics, artificial formation of In-rich TnGaN/GaN QDs was done at a relatively lower growth temperature than that of QWs. From In-rich InGaN/GaN QDs, we could obtain high efficiency ultraviolet emission at room temperature.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2005-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

QUANTUM DOTS; WELL STRUCTURES; INDIUM NITRIDE; PHASE EPITAXY; BAND-GAP; INTERRUPTION; EMISSION; PHYSICS

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133

ISSN
0374-4884
URI
http://hdl.handle.net/10203/91589
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 2 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0