Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature

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Oxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below 600 degrees C. At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of O-2 on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of SiO species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation.
Publisher
AMERICAN PHYSICAL SOC
Issue Date
2006-10
Language
English
Article Type
Article
Keywords

SILICON NANOCRYSTALS; THIN-FILM; PHOTOLUMINESCENCE; IDENTIFICATION; SI(111)-(7X7); LUMINESCENCE; SURFACES; SI(100); XPS

Citation

PHYSICAL REVIEW B, v.74, no.15

ISSN
1098-0121
DOI
10.1103/PhysRevB.74.153305
URI
http://hdl.handle.net/10203/91549
Appears in Collection
NT-Journal Papers(저널논문)
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