High rate DC-reactive sputter deposition of Y2O3 film on the textured metal substrate for the superconducting coated conductor

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dc.contributor.authorKim, HSko
dc.contributor.authorPark, Cko
dc.contributor.authorKo, RKko
dc.contributor.authorShi, DQko
dc.contributor.authorChung, JKko
dc.contributor.authorHa, HSko
dc.contributor.authorPark, YMko
dc.contributor.authorSong, KJko
dc.contributor.authorYoum, Do-Junko
dc.date.accessioned2013-03-06T23:29:20Z-
dc.date.available2013-03-06T23:29:20Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-10-
dc.identifier.citationPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, v.426, pp.926 - 932-
dc.identifier.issn0921-4534-
dc.identifier.urihttp://hdl.handle.net/10203/88815-
dc.description.abstractY2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y,03 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed T-c, I-c (77 K, self field), and J(c) (77 K, self field) of 89 K, 64 A/cm and 1.1 MA/cm(2), respectively. (c) 2005 Published by Elsevier B.V.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCRITICAL-CURRENT DENSITY-
dc.subjectBUFFER LAYERS-
dc.subjectTAPES-
dc.subjectNI-
dc.titleHigh rate DC-reactive sputter deposition of Y2O3 film on the textured metal substrate for the superconducting coated conductor-
dc.typeArticle-
dc.identifier.wosid000232698700013-
dc.identifier.scopusid2-s2.0-25644435599-
dc.type.rimsART-
dc.citation.volume426-
dc.citation.beginningpage926-
dc.citation.endingpage932-
dc.citation.publicationnamePHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS-
dc.contributor.localauthorYoum, Do-Jun-
dc.contributor.nonIdAuthorKim, HS-
dc.contributor.nonIdAuthorPark, C-
dc.contributor.nonIdAuthorKo, RK-
dc.contributor.nonIdAuthorShi, DQ-
dc.contributor.nonIdAuthorChung, JK-
dc.contributor.nonIdAuthorHa, HS-
dc.contributor.nonIdAuthorPark, YM-
dc.contributor.nonIdAuthorSong, KJ-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorY2O3-
dc.subject.keywordAuthorDC reactive sputtering-
dc.subject.keywordAuthorbuffer layer-
dc.subject.keywordAuthorcoated conductor-
dc.subject.keywordPlusCRITICAL-CURRENT DENSITY-
dc.subject.keywordPlusBUFFER LAYERS-
dc.subject.keywordPlusTAPES-
dc.subject.keywordPlusNI-
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