The Nd-nanocluster coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide

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The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 matrix, were prepared by electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of SiH4 and O-2 with cosputtering of Nd and subsequent anneal at 950 degreesC. Efficient Nd3+ luminescence with moderate temperature quenching is observed. Based on an analysis of the temperature dependence of Nd3+ luminescence lifetime, we find a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+ via quantum-confined excitons, while weak enough to result in a small back-transfer rate is identified as the key to Nd3+ luminescence. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-10
Language
English
Article Type
Article
Keywords

1.54 MU-M; RARE-EARTH IONS; SI NANOCRYSTALS; ENERGY-TRANSFER; OPTICAL-PROPERTIES; ER3+ LUMINESCENCE; POROUS SILICON; SEMICONDUCTORS; TEMPERATURE; MECHANISMS

Citation

APPLIED PHYSICS LETTERS, v.83, pp.2778 - 2780

ISSN
0003-6951
DOI
10.1063/1.1615837
URI
http://hdl.handle.net/10203/79006
Appears in Collection
NT-Journal Papers(저널논문)
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