CHEMICAL-VAPOR-DEPOSITION; LOW-DIELECTRIC-CONSTANT; F-DOPED SIO2-FILMS; THIN-FILMS; ROOM-TEMPERATURE; MULTILEVEL INTERCONNECTIONS; INTERLAYER DIELECTRICS; SILICON-OXIDE; FLUORINE; STABILITY
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.7, pp.2576 - 2580
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.