Time-resolved photoinduced absorption spectroscopic study on trapped carriers at semiconductor-glass interfaces

The photoinduced absorption below the band gap of a color glass filter doped by CdS0.4Se0.6 microcrystals was investigated by using time-resolved differential transmittance spectroscopy. The electron trapping at microcrystal-glass interfaces was found to occur within less than 1 ps after photoexcitation. At low excitation energy density, the excited electrons are trapped at point defects distributed over the nanocrystal interfaces. Such electrons give rise to long-lived photoinduced absorption with a lifetime of 3.2 ns. On the other hand, at high excitation energy density, transient absorption with a fast (60 ps) and simultaneously a slow decay component (3.2 ns) was observed. This short-lived photoinduced absorption is attributed to the electrons trapped at the shallow trap states of the semiconductor-glass interfaces.
Publisher
SPRINGER VERLAG
Issue Date
1997-05
Language
ENG
Keywords

DOPED GLASSES; SIZE DEPENDENCE; QUANTUM DOTS; CDSXSE1-X-DOPED GLASSES; OPTICAL NONLINEARITIES; ELECTRONIC-STRUCTURE; COLORED GLASS; DYNAMICS; CLUSTERS; CDSE

Citation

APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.64, no.5, pp.445 - 449

ISSN
0947-8396
URI
http://hdl.handle.net/10203/75059
Appears in Collection
PH-Journal Papers(저널논문)
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