Measurement of spontaneous emission factor for 850 nm gain-guided vertical-cavity surface-emitting lasers

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dc.contributor.authorKim, JHko
dc.contributor.authorShin, JHko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2013-02-28T06:22:17Z-
dc.date.available2013-02-28T06:22:17Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, pp.L1003 - L1005-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/73221-
dc.description.abstractUsing a method based on the measurement of below-threshold cavity loss and optical power, we experimentally determine the spontaneous emission factor of 850 nm gain-guided vertical-cavity surface-emitting lasers. Since om method needs only below-threshold information, we can avoid complex problems concerning above-threshold effects and obtain more reliable results. It is also pointed out that the typical L-I curve-fitting method results in unreliable estimation of the spontaneous emission factor. The values of spontaneous emission factors obtained are 6.6, 4.1, and 2.4 x 10(-4) for 10-, 15-, and 20-mu m-diameter circular aperture VCSELs, respectively.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.titleMeasurement of spontaneous emission factor for 850 nm gain-guided vertical-cavity surface-emitting lasers-
dc.typeArticle-
dc.identifier.wosidA1997XQ83200010-
dc.identifier.scopusid2-s2.0-0031199532-
dc.type.rimsART-
dc.citation.volume36-
dc.citation.beginningpageL1003-
dc.citation.endingpageL1005-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorKim, JH-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorvertical-cavity surface-emitting lasers-
dc.subject.keywordAuthorgallium arsenide-
dc.subject.keywordAuthorspontaneous emission factor-
dc.subject.keywordAuthorthermal lensing effect-
dc.subject.keywordAuthorlight-current characteristics-
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