(ROOT(3)X-ROOT(3)R30-DEGREES AG/SI(111) SURFACE; SCANNING-TUNNELING-MICROSCOPY; 1ST-PRINCIPLES CALCULATIONS; SCHOTTKY-BARRIER; SEMICONDUCTOR INTERFACES; ELECTRONIC-PROPERTIES; SPECTROSCOPY; ANGLE; LAYER
PHYSICAL REVIEW B, v.52, no.23, pp.16325 - 16328
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