Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions

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dc.contributor.authorKwon, YHko
dc.contributor.authorGainer, GHko
dc.contributor.authorBidnyk, Sko
dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorSong, JJko
dc.contributor.authorHansen, Mko
dc.contributor.authorDenBaars, SPko
dc.date.accessioned2013-02-27T17:14:22Z-
dc.date.available2013-02-27T17:14:22Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-
dc.identifier.citationMRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.12 - 7-
dc.identifier.issn1092-5783-
dc.identifier.urihttp://hdl.handle.net/10203/69776-
dc.description.abstractThe effect of In on the structural and optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.-
dc.languageEnglish-
dc.publisherMATERIALS RESEARCH SOCIETY-
dc.subjectEXCITON LOCALIZATION-
dc.subjectLASER-DIODES-
dc.titleComparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different in compositions-
dc.typeArticle-
dc.identifier.wosid000090103600135-
dc.identifier.scopusid2-s2.0-84862403296-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.beginningpage12-
dc.citation.endingpage7-
dc.citation.publicationnameMRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKwon, YH-
dc.contributor.nonIdAuthorGainer, GH-
dc.contributor.nonIdAuthorBidnyk, S-
dc.contributor.nonIdAuthorSong, JJ-
dc.contributor.nonIdAuthorHansen, M-
dc.contributor.nonIdAuthorDenBaars, SP-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusEXCITON LOCALIZATION-
dc.subject.keywordPlusLASER-DIODES-
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