Electron temperature control with grid bias in inductively coupled argon plasma

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The mechanism of controlling electron temperature with grid-biased voltage is studied experimentally and the relevant physics is discussed in an inductively coupled Ar discharge. To obtain the electron density and electron temperature, the electron energy distribution functions (EEDFs) are measured with a Langmuir probe. As the grid voltage decreases negatively, the effective electron temperature is controlled from 2.0 to 0.6 eV and the electron density changes from 3x10(10) to 2x10(10) cm(-3) in the diffusion region, while the effective electron temperature and electron density are not changed in the source region. The dependence of such various parameters, as electron density, electron temperature, plasma potential in each region, and so on, on the applied voltage, is presented. The functional relations between the measured physical quantities are well explained based on a global particle and energy balance relations. (C) 1999 American Institute of Physics. [S1070-664X(99)04503-6].
Publisher
AMER INST PHYSICS
Issue Date
1999-03
Language
English
Article Type
Article
Keywords

CYCLOTRON-RESONANCE PLASMA; ENERGY-DISTRIBUTION FUNCTION; HIGH-DENSITY PLASMA; SILICON DIOXIDE; DISCHARGE; MODEL; DIAGNOSTICS; IONIZATION; RADICALS

Citation

PHYSICS OF PLASMAS, v.6, no.3, pp.1017 - 1028

ISSN
1070-664X
URI
http://hdl.handle.net/10203/68843
Appears in Collection
PH-Journal Papers(저널논문)
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