Detection of electrically formed photosensitive area in Ca-doped BiFeO3 thin films

We report on the visualization of n-p junctions formed by oxygen vacancy movement under the application of an electric field in a Ca-doped BiFeO3 thin film through spatially resolved scanning photocurrent mapping. The photocurrent mapping, in conjunction with the spectroscopic approach, provides clues to local electronic structures and defect levels associated with oxygen vacancies. These observations provide insights into the spatial redistribution of oxygen vacancies in an electric field. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774381]
Publisher
AMER INST PHYSICS
Issue Date
2013-01
Language
ENG
Keywords

OXIDE; FERROELECTRICS; TRANSITION; STRAIN

Citation

APPLIED PHYSICS LETTERS, v.102, no.1

ISSN
0003-6951
DOI
10.1063/1.4774381
URI
http://hdl.handle.net/10203/66127
Appears in Collection
PH-Journal Papers(저널논문)
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