PRESSURE INCREASE OF THE ELECTRON-PHONON INTERACTION IN SUPERCONDUCTING HEXAGONAL SILICON
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | DACOROGNA, MM | ko |
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.contributor.author | COHEN, ML | ko |
| dc.date.accessioned | 2013-02-25T19:53:05Z | - |
| dc.date.available | 2013-02-25T19:53:05Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1985-08 | - |
| dc.identifier.citation | PHYSICAL REVIEW B, v.32, no.3, pp.1853 - 1855 | - |
| dc.identifier.issn | 0163-1829 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64830 | - |
| dc.language | English | - |
| dc.publisher | AMERICAN PHYSICAL SOC | - |
| dc.title | PRESSURE INCREASE OF THE ELECTRON-PHONON INTERACTION IN SUPERCONDUCTING HEXAGONAL SILICON | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1985ANG1500054 | - |
| dc.identifier.scopusid | 2-s2.0-6244304055 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 32 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 1853 | - |
| dc.citation.endingpage | 1855 | - |
| dc.citation.publicationname | PHYSICAL REVIEW B | - |
| dc.identifier.doi | 10.1103/PhysRevB.32.1853 | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | DACOROGNA, MM | - |
| dc.contributor.nonIdAuthor | COHEN, ML | - |
| dc.description.isOpenAccess | N | - |
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