Mechanism of the High-temperature Conductivity Kinks in Hydrogenated Amorphous silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | S.H.Yang | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-25T16:54:16Z | - |
| dc.date.available | 2013-02-25T16:54:16Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1986 | - |
| dc.identifier.citation | PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC, v.53, no.4, pp.293 - 300 | - |
| dc.identifier.issn | 0141-8637 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/63702 | - |
| dc.language | English | - |
| dc.publisher | Taylor & Francis Ltd | - |
| dc.title | Mechanism of the High-temperature Conductivity Kinks in Hydrogenated Amorphous silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1986C227200006 | - |
| dc.identifier.scopusid | 2-s2.0-0022693760 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 53 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 293 | - |
| dc.citation.endingpage | 300 | - |
| dc.citation.publicationname | PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC | - |
| dc.contributor.nonIdAuthor | S.H.Yang | - |
| dc.type.journalArticle | Article | - |
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