DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHO, HY | ko |
dc.contributor.author | KIM, EK | ko |
dc.contributor.author | MIN, SK | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.contributor.author | Lee, Choochon | ko |
dc.date.accessioned | 2013-02-25T15:50:52Z | - |
dc.date.available | 2013-02-25T15:50:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.58, no.17, pp.1866 - 1868 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/63331 | - |
dc.description.abstract | New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E(c)) is generated during hydrogenation and shows metastable for the E(c) - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an E(c) - 0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The E(c) - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with E(c) - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DONOR NEUTRALIZATION | - |
dc.subject | ATOMIC-HYDROGEN | - |
dc.subject | ELECTRON TRAP | - |
dc.subject | DEFECT | - |
dc.subject | PASSIVATION | - |
dc.subject | INP | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | SILICON | - |
dc.subject | IDENTIFICATION | - |
dc.subject | EL2 | - |
dc.title | METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAAS | - |
dc.type | Article | - |
dc.identifier.wosid | A1991FJ59700021 | - |
dc.identifier.scopusid | 2-s2.0-3643092991 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 17 | - |
dc.citation.beginningpage | 1866 | - |
dc.citation.endingpage | 1868 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.105056 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | CHO, HY | - |
dc.contributor.nonIdAuthor | KIM, EK | - |
dc.contributor.nonIdAuthor | MIN, SK | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DONOR NEUTRALIZATION | - |
dc.subject.keywordPlus | ATOMIC-HYDROGEN | - |
dc.subject.keywordPlus | ELECTRON TRAP | - |
dc.subject.keywordPlus | DEFECT | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | IDENTIFICATION | - |
dc.subject.keywordPlus | EL2 | - |
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