Polymer light-emitting devices using ionomers as an electron injecting and hole blocking layer

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The effect of ion concentration, neutralization level and counterions in ionomers was systematically studied to obtain the optimal electroluminescent (EL) characteristics in polymer light-emitting diodes using poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) for the emissive layer and sulfonated polystyrene (SPS) ionomers for the electron-injecting layer. The optimum ion concentration of NaSPS was determined to be at 6.7 mol %. Ionomers with a higher neutralization level make the EL device more efficient, with the highest efficiency being at 200% overneutralization. The ionomer with a smaller metal counter ion greatly enhances the efficiency of EL devices with the indium-tin-oxide/MEH-PPV/LiSPS/Al device having the highest EL quantum efficiency, 1.18% photons/electron. The dominant factor in enhancing the luminance is the number of ionic dipoles near the cathode irrespective of the type of metal counterions, while the hole blocking mostly depends on the restriction of chain segmental motion in ionomers. (C) 2001 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2001-09
Language
ENG
Article Type
Article
Keywords

SULFONATED POLYSTYRENE IONOMERS; CONJUGATED POLYMERS; DIODES; CATHODE; ELECTROLUMINESCENCE; EFFICIENCY; EMISSION; INTERFACES

Citation

JOURNAL OF APPLIED PHYSICS, v.90, no.5, pp.2128 - 2134

ISSN
0021-8979
URI
http://hdl.handle.net/10203/5073
Appears in Collection
CH-Journal Papers(저널논문)
Files in This Item
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