Parallelized Single-Electron Pumps Based on Gate-Tunable Quantum Dots

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Parallelization of pump devices is a direct way to increase the output level of the single-electron pump, which is required for metrological purposes. We fabricated a pair of single-electron pumps in parallel on a chip level and investigated their synchronized electron pumping phenomena. In the investigation, the pumping error was estimated to see whether the error was increased after the parallelization. We found that a proper choice of rf gates must be made in accordance with the direction of the applied magnetic field. In relation with the chirality of the edge state, the rf modulating gates should be chosen not to produce rf-induced heating effects.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2019-08
Language
English
Article Type
Article
Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.75, no.4, pp.331 - 336

ISSN
0374-4884
DOI
10.3938/jkps.75.331
URI
http://hdl.handle.net/10203/267675
Appears in Collection
PH-Journal Papers(저널논문)
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