DC Field | Value | Language |
---|---|---|
dc.contributor.author | Johar, Muhammad Ali | ko |
dc.contributor.author | Song, Hyun Gyu | ko |
dc.contributor.author | Waseem, Aadil | ko |
dc.contributor.author | Kang, Jin-Ho | ko |
dc.contributor.author | Ha, Jun-Seok | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Ryu, Sang-Wan | ko |
dc.date.accessioned | 2019-06-24T00:50:03Z | - |
dc.date.available | 2019-06-24T00:50:03Z | - |
dc.date.created | 2019-06-23 | - |
dc.date.created | 2019-06-23 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | NANOSCALE, v.11, no.22, pp.10932 - 10943 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262782 | - |
dc.description.abstract | The growth of semi-polar (112 2) GaN/ InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/ InGaN MQW shells are grown in a two-step growth sequence of vapor-liquid-solid and vapor-solid growth modes. The luminescence and carrier dynamics of GaN/ InGaN MQW coaxial nanowires are studied by photoluminescence, cathodoluminescence, and low temperature time-resolved photoluminescence (TRPL). The emission is tuned from 430 nm to 590 nm by increasing the InGaN QW thickness. The non-single exponential decay measured by low-temperature TRPL was attributed to the indium fluctuations in the InGaN QW. The ultrafast radiative lifetime was measured from 14 ps to 26 ps with different emission wavelengths at a very high internal quantum efficiency up to 68%. An ultrafast carrier lifetime was assigned to the growth of the InGaN QW on semipolar (112 <overline> 2) growth facet and the improved carrier collection efficiency due to the radial growth of the GaN/ InGaN MQW shells. Such an ultrafast carrier dynamics of NWs provides a meaningful active medium for high speed optoelectronic applications. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Ultrafast carrier dynamics of conformally grown semi-polar (1122) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000470756000035 | - |
dc.identifier.scopusid | 2-s2.0-85067031212 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 10932 | - |
dc.citation.endingpage | 10943 | - |
dc.citation.publicationname | NANOSCALE | - |
dc.identifier.doi | 10.1039/c9nr02823d | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Johar, Muhammad Ali | - |
dc.contributor.nonIdAuthor | Waseem, Aadil | - |
dc.contributor.nonIdAuthor | Kang, Jin-Ho | - |
dc.contributor.nonIdAuthor | Ha, Jun-Seok | - |
dc.contributor.nonIdAuthor | Ryu, Sang-Wan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | HIGH-ASPECT-RATIO | - |
dc.subject.keywordPlus | FACILE GROWTH | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | DENSITY | - |
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