DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhang, Peng | ko |
dc.contributor.author | Kim, Yong-Hyun | ko |
dc.contributor.author | Wei, Su-Huai | ko |
dc.date.accessioned | 2019-06-19T01:50:28Z | - |
dc.date.available | 2019-06-19T01:50:28Z | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.created | 2019-06-18 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.citation | PHYSICAL REVIEW APPLIED, v.11, no.5, pp.054058 | - |
dc.identifier.issn | 2331-7019 | - |
dc.identifier.uri | http://hdl.handle.net/10203/262750 | - |
dc.description.abstract | Dilute magnetic semiconductors (DMSs) have attracted much attention because of their huge potential applications in spintronics. The simple band-coupling model suggests that isovalent doping of semi-conductors (e.g., Mn-doped II-V semiconductors) should be antiferromagnetic due to the dominant superexchange interaction, which is consistent with experimental observations on most Mn-doped II-VI and Fe-doped III-V semiconductors (FDMSs). However, recently, it has been reported experimentally that some FDMSs are ferromagnetic with a very high Curie temperature (T-C) of over 300 K, but the underlying mechanism is not clear. Here, we reveal that the unusual ferromagnetism in FDMSs originates from a unique p-d coupling-induced band crossing and the resulting charge transfer from anion p to unoccupied Fe 3d orbitals. This result suggests that the ferromagnetism can be more easily realized by Fe doping in III-V semiconductors with high anion p orbital energies, such as GaSb, instead of those with small band gaps, such as InAs. Moreover, we illustrate that the isovalent character guarantees low self-compensation in FDMSs, which sets a major advantage to the realization of high T-C in FDMSs. Our finding can well explain the recent experimental observations and suggests a new avenue for the future design of high-T-C DMSs. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Origin of High-Tc Ferromagnetism in Isovalent-Doped III-V Semiconductors | - |
dc.type | Article | - |
dc.identifier.wosid | 000469042100001 | - |
dc.identifier.scopusid | 2-s2.0-85066738854 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 054058 | - |
dc.citation.publicationname | PHYSICAL REVIEW APPLIED | - |
dc.identifier.doi | 10.1103/PhysRevApplied.11.054058 | - |
dc.contributor.localauthor | Kim, Yong-Hyun | - |
dc.contributor.nonIdAuthor | Zhang, Peng | - |
dc.contributor.nonIdAuthor | Wei, Su-Huai | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MODEL | - |
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