Multiple relaxations of the cluster surface diffusion in a homoepitaxial SrTiO3 layer

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We examine the surface diffusion process of adatomic clusters on a (001)-oriented SrTiO3 single crystal using reflection high energy electron diffraction (RHEED). We find that the recovery curve of the RHEED intensity acquired after a homoepitaxial half-layer growth can be accurately fit into a double exponential function, indicating the existence of two dominant relaxation mechanisms. The characteristic relaxation times at selected growth temperatures are investigated to determine the diffusion activation barriers of 0.67 eV and 0.91 eV, respectively. The Monte Carlo simulation of the cluster hopping model suggests that the decrease in the number of dimeric and trimeric clusters during surface diffusion is the origin of the observed relaxation phenomena. Published by AIP Publishing.
Publisher
AMER INST PHYSICS
Issue Date
2018-03
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.112, no.13, pp.131602

ISSN
0003-6951
DOI
10.1063/1.5020943
URI
http://hdl.handle.net/10203/241525
Appears in Collection
PH-Journal Papers(저널논문)
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