Short channel device performance of amorphous InGaZnO thin film transistor

Abstract

Short channel device performance of deep-submicron gate length oxide thin film transistor (TFT) with amorphous InGaZnO (a-IGZO) active semiconductor is presented. Remarkable electrical properties of short channel oxide TFT were achieved utilizing crucial structure and material optimization such as self aligned gate structure with homo junction, multi-channel with rounded corners, and high-kappa gate dielectric. It was found that various device performance parameters of short channel-oxide TFTs were significantly influenced by materials, processes, and structural geometry, which should be more carefully designed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623426]