Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Cited 200 time in webofscience Cited 0 time in scopus
  • Hit : 110
  • Download : 0
The composition of amorphous oxide semiconductors, which are well known for their optical transparency(1-4), can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed(5,6), which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2012-04
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; FABRICATION; TRANSPORT; DISORDER

Citation

NATURE MATERIALS, v.11, no.4, pp.301 - 305

ISSN
1476-1122
DOI
10.1038/NMAT3256
URI
http://hdl.handle.net/10203/240821
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 200 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0