Impact of transparent electrode on photoresponse of ZnO-based phototransistor

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ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer. (C) 2013 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2013-12
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODE; MOS2 PHOTOTRANSISTORS; OXIDE; ULTRAVIOLET; PERFORMANCE; PHOTODETECTORS; ARRAYS

Citation

APPLIED PHYSICS LETTERS, v.103, no.25

ISSN
0003-6951
DOI
10.1063/1.4855055
URI
http://hdl.handle.net/10203/240804
Appears in Collection
EE-Journal Papers(저널논문)
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