RECONSTRUCTION ON SI(100) SURFACES

We have observed several reconstructions on a Si(100) surface with different annealing procedures. The observed reconstructed phases are the coexistence of the (2X2) phase and the (2X8) phase after high-temperature (greater than or similar to 950 K) annealing followed by quenching, and the half-order streak with the presence of the (2X1) phase after low-temperature (less than or similar to 950 K) annealing. The phase transition from the metastable (2X2) and (2X8) phases to the stable half-order streak is reversible upon annealing temperature and cooling rate. The distribution of kinks and missing dimer defects is expected to be the main cause of these reconstructions.
Publisher
AMERICAN PHYSICAL SOC
Issue Date
1994-10
Language
ENG
Keywords

SCANNING-TUNNELING-MICROSCOPY; VACANCY DIFFUSION; SI(001); TEMPERATURE; DIFFRACTION; KINETICS; DIMERS; STEPS

Citation

PHYSICAL REVIEW B, v.50, no.15, pp.11204 - 11207

ISSN
0163-1829
URI
http://hdl.handle.net/10203/11305
Appears in Collection
CH-Journal Papers(저널논문)
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