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Showing results 205721 to 205740 of 275872

205721
Tunnel excavation using waterjet pre-cutting technology

Cho, Gye-Chun; Oh,T.M.; Joo, G.W.; Hong, C.H.; Ji, I.T., World Tunnel Congress 2013 Geneva: Underground – the way to the future!, ITA-AITES, 2013-05-31

205722
Tunnel face ahead prediction on TBM using tunnel electrical resistivity prospecting system (TEPS)

Hong, C.H.; Cho, Gye-Chun; Hong, E.S.; Ryu, H.H., See Tunnel: Promoting Tunneling in SEE Region, ITA WTC 2015 Congress and 41st General Assembly, ITA-AITES, 2015-05-22

205723
Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate

Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Shin, Min-Cheol; Lee, Seok-Hee, ISPSA-2014, ISPSA-2014, 2014-12-08

205724
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications

Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi, THIN SOLID FILMS, v.557, pp.298 - 301, 2014-04

205725
Tunnel flexibility effect on the ground surface acceleration response

Baziar, Mohammad Hassan; Moghadam, Masoud Rabeti; Choo, Yun Wook; Kim, Dong-Soo, EARTHQUAKE ENGINEERING AND ENGINEERING VIBRATION, v.15, no.3, pp.457 - 476, 2016-09

205726
Tunnel Forecasting Method using Electromagnetic Waves

Hong, Chang Ho; Hong, Eun-Soo; Cho, Gye-Chun; Ryu, Hee-Hwan, The 6th international Young Geotechnical Engineer's Conference (iYGEC6), pp.140 - 141, International Society for Soil Mechanics and Geotechnical Engineering, 2017-09

205727
Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

Park, Byong Guk; Banerjee, T; Min, BC; Lodder, JC; Jansen, R, PHYSICAL REVIEW B, v.73, no.17, 2006-05

205728
Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

Park, Byong Guk; Banerjee, T; Lodder, JC; Jansen, R, PHYSICAL REVIEW LETTERS, v.99, no.21, 2007-11

205729
Tunneling anisotropic magnetoresistance in Multilayer-(Co/Pt)/AlO(x)/Pt structures

Park, Byong Guk; Wunderlich, J; Williams, DA; Joo, SJ; Jung, KY; Shin, KH; Olejnik, K; et al, PHYSICAL REVIEW LETTERS, v.100, no.8, 2008-02

205730
Tunneling diode logic IC using CML-type input driving circuit configuration and monostable bistable transition logic element (MOBILE)

양경훈, 2008-07-22

205731
Tunneling dynamics dictated by the multidimensional conical intersection seam in the pi sigma*-mediated photochemistry of heteroaromatic molecules

Kim, Junggil; Woo, Kyung Chul; Kim, Kuk Ki; Kang, Minseok; Kim, Sang Kyu, BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.43, no.2, pp.150 - 164, 2022-02

205732
Tunneling Effects in a Charge-Plasma Dopingless Transistor

Hur, Jae; Moon, Dong-Il; Han, Jin-Woo; Kim, Gun-Hee; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.16, no.2, pp.315 - 320, 2017-03

205733
Tunneling effects in the $D+H_2$ → DH+H and $H+D_2$ → HD+D reactions = $D+H_2$ → DH+H 반응과 $H+D_2$ → HD+D 반응에 있어서의 텐넬 효과link

Ree, Jong-Baik; 이종백; et al, 한국과학기술원, 1981

205734
Tunneling electroresistance Effect Enhanced by Polar Interface in Hafnia-based Ferroelectric Tunnel Junction

서준범; 신민철, 제27회 한국반도체학술대회, 제27회 한국반도체학술대회, 2020-02-13

205735
Tunneling field-effect transistor based on MoS2-Si vertical hetero-structure

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Choi, Sung-Yool, NANO KOREA 2017, NANO KOREA 2017, 2017-07-13

205736
Tunneling field-effect transistor with a plurality of nano-wires and fabrication method thereof

Choi, Yang-Kyu; Park, Jun-Young, 2018-06-12

205737
Tunneling in Bangkok-Two Case Studies

Teparakas Wanchai; 조계춘, 한국터널지하공간학회 논문집, v.7, no.2, pp.59 - 69, 2005-06

205738
Tunneling nitride insulator grown by electron cyclotron resonance nitrogen plasma nitridation for low-voltage EEPROM

Lee, Kwyro; Min, Kyeong-Sik; Chung, Jin-Yong, The 8th Korean Conference on Semiconductors, pp.15 - 16, 2001

205739
Tunnelling current-voltage characteristics of Angstrom gaps measured with terahertz time-domain spectroscopy

Kim, Joon-Yeon; Kang, Bong Joo; Bahk, Young-Mi; Kim, Yong Seung; Park, Joohyun; Kim, Won Tae; Rhie, Jiyeah; et al, SCIENTIFIC REPORTS, v.6, pp.29103, 2016-06

205740
Tunnelling field effect transistor based on highly p-doped silicon and MoS2 heterostructure

Shin, Gwang Hyuk; Koo, BonDae; Park, Hamin; Woo YoungJun; LEE, JAEEUN; Choi, Sung-Yool, Graphene Week 2017, Graphene Week 2017, 2017-09-25

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