Effect of local surface potential distribution on its relaxation in polycrystalline ferroelectric films

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dc.contributor.authorKim, Yun-Seokko
dc.contributor.authorPark, Moon-Kyuko
dc.contributor.authorBuehlmann, Simonko
dc.contributor.authorHong, Daniel Seungbumko
dc.contributor.authorKim, Yong-Kwanko
dc.contributor.authorKo, Hyoung-Sooko
dc.contributor.authorKim, Ji-Yoonko
dc.contributor.authorNo, Kwang-Sooko
dc.date.accessioned2013-03-11T11:04:26Z-
dc.date.available2013-03-11T11:04:26Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-03-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.107, no.5-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/99095-
dc.description.abstractWe have studied the effect of local surface potential distribution on its relaxation in the polycrystalline ferroelectric thin films. A lower surface potential region, i.e., potential pit, is generated near a grain boundary. The deep potential pit has a faster relaxation than the area far away from the potential pit due to the acceleration of the screen charge draining near the grain boundary and the domains formed by applying higher voltage have a faster relaxation due to the larger gradient of screen charge distribution. In addition, the surface potential and its relaxation depend on the sign of applying voltage. The result shows that the surface potential distribution may influence significantly to the reliability of bit signal on the memory devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3290953]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectTHIN-FILMS-
dc.subjectPROBE MICROSCOPY-
dc.subjectFORCE MICROSCOPY-
dc.subjectCHARGE-
dc.titleEffect of local surface potential distribution on its relaxation in polycrystalline ferroelectric films-
dc.typeArticle-
dc.identifier.wosid000275657500090-
dc.identifier.scopusid2-s2.0-77949746321-
dc.type.rimsART-
dc.citation.volume107-
dc.citation.issue5-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.3290953-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.localauthorNo, Kwang-Soo-
dc.contributor.nonIdAuthorBuehlmann, Simon-
dc.contributor.nonIdAuthorKim, Yong-Kwan-
dc.contributor.nonIdAuthorKo, Hyoung-Soo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusPROBE MICROSCOPY-
dc.subject.keywordPlusFORCE MICROSCOPY-
dc.subject.keywordPlusCHARGE-
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