The effect of growth temperature on physical properties of heavily doped ZnO:Al films

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dc.contributor.authorHong, Jonginko
dc.contributor.authorPaik, Hanjongko
dc.contributor.authorHwang, Hosungko
dc.contributor.authorLee, Sunghwanko
dc.contributor.authordeMello, Andrew J.ko
dc.contributor.authorNo, Kwangsooko
dc.date.accessioned2013-03-11T10:44:58Z-
dc.date.available2013-03-11T10:44:58Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-04-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.206, no.4, pp.697 - 703-
dc.identifier.issn1862-6300-
dc.identifier.urihttp://hdl.handle.net/10203/99064-
dc.description.abstractHeavily-doped ZnO Al film have been deposited on high temperature stable glass substrates using radio-frequency (RF) magnetron sputtering. The effect of growth temperature on physical properties of the films has been investigated. The microstructure evolved a columnar structure into a granular one with the increase in growth temperature and then a typical honeycomb type microstructure representing huge grain formation indicating high densification. All Al-doped ZnO films exhibited high optical transparency and the absorption edge shifted to the short wavelength (blue-shift) as the growth temperature increased. The dense microstructure with a high crystallographic quality and large grains evolved at 500 degrees C enabled us to obtain 2.28 x 10(-3) Omega cm and high visible transmittance over 90% even if the ZnO film was doped with an Al content of approximately 5.5 at%. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTRANSPARENT CONDUCTING OXIDES-
dc.subjectTHIN-FILMS-
dc.subjectSEMICONDUCTORS-
dc.titleThe effect of growth temperature on physical properties of heavily doped ZnO:Al films-
dc.typeArticle-
dc.identifier.wosid000265874400024-
dc.identifier.scopusid2-s2.0-65649106890-
dc.type.rimsART-
dc.citation.volume206-
dc.citation.issue4-
dc.citation.beginningpage697-
dc.citation.endingpage703-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.identifier.doi10.1002/pssa.200824291-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorHong, Jongin-
dc.contributor.nonIdAuthorHwang, Hosung-
dc.contributor.nonIdAuthordeMello, Andrew J.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTRANSPARENT CONDUCTING OXIDES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusSEMICONDUCTORS-
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