Na doping properties of Cu(In,Ga)Se2 absorber layer using NaF interlayer on Mo substrate

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dc.contributor.authorPark TJko
dc.contributor.authorShin DHko
dc.contributor.authorAhn BTko
dc.contributor.authorYun JHko
dc.date.accessioned2013-03-11T08:27:23Z-
dc.date.available2013-03-11T08:27:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-
dc.identifier.citation한국재료학회지, v.19, no.8, pp.452 - 456-
dc.identifier.issn1225-0562-
dc.identifier.urihttp://hdl.handle.net/10203/98790-
dc.description.abstractIn high-efficiency Cu(In,Ga)Se2 solar cells, Na is doped into a Cu(In,Ga)Se2 light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)Se2 absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of 103 Ω·cm indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.-
dc.languageKorean-
dc.publisher한국재료학회-
dc.titleNa doping properties of Cu(In,Ga)Se2 absorber layer using NaF interlayer on Mo substrate-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-71149103866-
dc.type.rimsART-
dc.citation.volume19-
dc.citation.issue8-
dc.citation.beginningpage452-
dc.citation.endingpage456-
dc.citation.publicationname한국재료학회지-
dc.contributor.localauthorAhn BT-
dc.contributor.nonIdAuthorPark TJ-
dc.contributor.nonIdAuthorShin DH-
dc.contributor.nonIdAuthorYun JH-
dc.subject.keywordAuthorAbsorber-
dc.subject.keywordAuthorCIGS-
dc.subject.keywordAuthorConversion efficiency-
dc.subject.keywordAuthorElectrical resistivity-
dc.subject.keywordAuthorMicrostructure-
dc.subject.keywordAuthorNa doping-
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MS-Journal Papers(저널논문)
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