DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Seok Kyu | ko |
dc.contributor.author | Kim, Jae Goo | ko |
dc.contributor.author | Kim, Jung-Hyun | ko |
dc.contributor.author | Hong, Soon-Ku | ko |
dc.contributor.author | Lee, Jae Wook | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Song, Jung-Hoon | ko |
dc.contributor.author | Nam, Yoon Sung | ko |
dc.contributor.author | Chang, Soo-Kyung | ko |
dc.contributor.author | Yao, Takafumi | ko |
dc.date.accessioned | 2013-03-11T05:26:08Z | - |
dc.date.available | 2013-03-11T05:26:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.27, pp.1635 - 1640 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/98381 | - |
dc.description.abstract | The authors report properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy in which two-step growth is employed. They show that the two-step growth is effective in improving structural and optical properties of a-plane ZnO films. Here, the two-step growth is preceded by growing the first layer under Zn-rich (O-rich) conditions and growing the second layer under O-rich (Zn-rich) conditions. All the grown samples show striated anisotropic morphology. The samples with the first, thin, O-rich layer plus the second, thick, Zn-rich layer show smaller root-mean-square (rms) roughness than those with the first, thin, Zn-rich layer plus the second, thick, O-rich layer. The sample with the 20-nm-thick first layer grown under O-rich condition shows the smallest rms roughness of 1.06 nm, which is a smaller rms value than that of the sample grown under the single-step, stoichiometric condition. This sample shows the highest intensity of D (0)X emission at 3.392 eV and small full width at half maxima of (1120) and (1011) x-ray rocking curves, which indicate the good crystal quality. | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | DEVICES | - |
dc.title | Effects of two-step growth by employing Zn-rich and O-rich growth conditions on properties of (1120) ZnO films grown by plasma-assisted molecular beam epitaxy on sapphire | - |
dc.type | Article | - |
dc.identifier.wosid | 000266500300124 | - |
dc.identifier.scopusid | 2-s2.0-77952663302 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.beginningpage | 1635 | - |
dc.citation.endingpage | 1640 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Han, Seok Kyu | - |
dc.contributor.nonIdAuthor | Kim, Jae Goo | - |
dc.contributor.nonIdAuthor | Kim, Jung-Hyun | - |
dc.contributor.nonIdAuthor | Hong, Soon-Ku | - |
dc.contributor.nonIdAuthor | Song, Jung-Hoon | - |
dc.contributor.nonIdAuthor | Nam, Yoon Sung | - |
dc.contributor.nonIdAuthor | Chang, Soo-Kyung | - |
dc.contributor.nonIdAuthor | Yao, Takafumi | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | molecular beam epitaxial growth | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | plasma materials processing | - |
dc.subject.keywordAuthor | semiconductor growth | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.subject.keywordPlus | DEVICES | - |
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