DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Jun-Ku | ko |
dc.contributor.author | Park, Kyoung-Woo | ko |
dc.contributor.author | Hur, Sung-Gi | ko |
dc.contributor.author | Seong, Nak-Jin | ko |
dc.contributor.author | Kim, Chung-Soo | ko |
dc.contributor.author | Lee, Jeong-Yong | ko |
dc.contributor.author | Yoon, Soon-Gil | ko |
dc.date.accessioned | 2013-03-11T04:53:44Z | - |
dc.date.available | 2013-03-11T04:53:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.9, pp.1751 - 1754 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | http://hdl.handle.net/10203/98298 | - |
dc.description.abstract | The feasibility of InSbTe (IST) chalcogenide new materials by metalorganic chemical vapor deposition (MOCVD) was demonstrated for PRAM applications. IST-MOCVD at a low temperature of 250 degrees C resulted in a favorable conformal deposition in the trench structure with a high aspect ratio. The IST films grown at 250 degrees C showed the highest resistance of approximately 10(8) Omega/sq, suggesting the amorphous phase of IST and the films grown at 300 degrees C include various crystalline phases of IST, In-Sb, and In-Te. MOCVD-IST films exhibited a step-coverage of about 95% in the trench structure with a 5 : 1 aspect ratio (a height of 500 nm and a diameter of 100 nm) and also showed reliable filling of the trench under appropriate deposition conditions. Phase switching between amorphous and crystalline states in the IST films grown on a trench structure at a high-aspect ratio (3.5 : 1) was demonstrated showing functional characteristics for applications in memory devices. The IST-based chalcogenide films used included various crystallized phases of In-Sb-Te, In-Sb and In-Te, which proved to be favorable for multilevel data storage. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | OPTICAL-DATA STORAGE | - |
dc.subject | GE2SB2TE5 FILMS | - |
dc.subject | ALLOY-FILMS | - |
dc.title | Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000274581000018 | - |
dc.identifier.scopusid | 2-s2.0-76949096872 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1751 | - |
dc.citation.endingpage | 1754 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.identifier.doi | 10.1039/b922398c | - |
dc.contributor.localauthor | Lee, Jeong-Yong | - |
dc.contributor.nonIdAuthor | Ahn, Jun-Ku | - |
dc.contributor.nonIdAuthor | Park, Kyoung-Woo | - |
dc.contributor.nonIdAuthor | Hur, Sung-Gi | - |
dc.contributor.nonIdAuthor | Seong, Nak-Jin | - |
dc.contributor.nonIdAuthor | Yoon, Soon-Gil | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | OPTICAL-DATA STORAGE | - |
dc.subject.keywordPlus | GE2SB2TE5 FILMS | - |
dc.subject.keywordPlus | ALLOY-FILMS | - |
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