Direct Fabrication of Zero- and One-Dimensional Metal Nanocrystals by Thermally Assisted Electromigration

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dc.contributor.authorYuk, Jong Minko
dc.contributor.authorKim, Kwan-Pyoko
dc.contributor.authorLee, Zong-Hoonko
dc.contributor.authorWatanabe, Masashiko
dc.contributor.authorZettl, Ako
dc.contributor.authorKim, Tae-Whanko
dc.contributor.authorNo, Young-Sooko
dc.contributor.authorChoi, Won-Kookko
dc.contributor.authorLee, Jeong-Yongko
dc.date.accessioned2013-03-11T03:24:43Z-
dc.date.available2013-03-11T03:24:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-06-
dc.identifier.citationACS NANO, v.4, no.6, pp.2999 - 3004-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10203/98137-
dc.description.abstractZero- and one-dimensional metal nanocrystals were successfully fabricated with accurate control in size, shape, and position on semiconductor surfaces by using a novel in situ fabrication method of the nanocrystal with a biasing tungsten tip in transmission electron microscopy. The dominant mechanism of nanocrystal formation was identified mainly as local Joule heating-assisted electromigration through the direct observation of formation and growth processes of the nanocrystal. This method was applied to extracting metal atoms with an exceedingly faster growth rate (similar to 10(5) atoms/s) from a metal-oxide thin film to form a metal nanocrystal with any desired size and position. By real-time observation of the microstructure and concurrent electrical measurements, it was found that the nanostructure formation can be completely controlled into various shapes such as zero-dimensional nanodots and one-dimensional nanowires/nanorods.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectSCANNING TUNNELING MICROSCOPE-
dc.subjectZNO THIN-FILM-
dc.subjectSINGLE-ELECTRON TRANSISTOR-
dc.subjectROOM-TEMPERATURE-
dc.subjectSURFACES-
dc.subjectDEVICES-
dc.subjectATOMS-
dc.titleDirect Fabrication of Zero- and One-Dimensional Metal Nanocrystals by Thermally Assisted Electromigration-
dc.typeArticle-
dc.identifier.wosid000278888600006-
dc.identifier.scopusid2-s2.0-77955916559-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue6-
dc.citation.beginningpage2999-
dc.citation.endingpage3004-
dc.citation.publicationnameACS NANO-
dc.identifier.doi10.1021/nn901674p-
dc.contributor.localauthorYuk, Jong Min-
dc.contributor.localauthorLee, Jeong-Yong-
dc.contributor.nonIdAuthorKim, Kwan-Pyo-
dc.contributor.nonIdAuthorLee, Zong-Hoon-
dc.contributor.nonIdAuthorWatanabe, Masashi-
dc.contributor.nonIdAuthorZettl, A-
dc.contributor.nonIdAuthorKim, Tae-Whan-
dc.contributor.nonIdAuthorNo, Young-Soo-
dc.contributor.nonIdAuthorChoi, Won-Kook-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSCANNING TUNNELING MICROSCOPE-
dc.subject.keywordPlusZNO THIN-FILM-
dc.subject.keywordPlusSINGLE-ELECTRON TRANSISTOR-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusATOMS-
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