DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Seok Kyu | ko |
dc.contributor.author | Kim, Jung-Hyun | ko |
dc.contributor.author | Hong, Soon-Ku | ko |
dc.contributor.author | Song, Jae-Ho | ko |
dc.contributor.author | Song, Jung-Hoon | ko |
dc.contributor.author | Lee, Jae Wook | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Hong, Sun Ig | ko |
dc.contributor.author | Yao, Takafumi | ko |
dc.date.accessioned | 2013-03-11T00:59:14Z | - |
dc.date.available | 2013-03-11T00:59:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.312, no.15, pp.2196 - 2200 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97859 | - |
dc.description.abstract | Structural and optical properties of nonpolar a-plane ZnO films grown with different II/VI ratios on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy were investigated. Even by increasing the II/VI ratio across the stoichiometric flux condition a consistent surface morphology of striated stripes along the ZnO < 0 0 0 1> direction without any pit formation was observed, which is contrary to polar c-plane ZnO films. Root mean square surface roughness, full width at half maximum values of X-ray rocking curves, defect densities, and photoluminescence were changed with the II/VI ratio. The sample grown with stoichiometric flux condition showed the lowest value of rms roughness, the smallest threading dislocation and stacking fault densities of similar to 4.7 x 10(8) cm(-2) and similar to 9.5 x 10(4) cm(-1), respectively, and the highest intensity of D X peak. These results imply that the stoichiometric flux growth condition is suitable to obtain superior structural and optical properties compared to other flux conditions. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | HOMOEPITAXIAL GROWTH | - |
dc.subject | 11(2)OVER-BAR-0 FILMS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SAPPHIRE | - |
dc.subject | GAN | - |
dc.subject | DIODES | - |
dc.subject | LAYER | - |
dc.title | Investigation of nonpolar (1 1 (2)over-bar 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000279409300006 | - |
dc.identifier.scopusid | 2-s2.0-77955279327 | - |
dc.type.rims | ART | - |
dc.citation.volume | 312 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 2196 | - |
dc.citation.endingpage | 2200 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.04.056 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Han, Seok Kyu | - |
dc.contributor.nonIdAuthor | Kim, Jung-Hyun | - |
dc.contributor.nonIdAuthor | Hong, Soon-Ku | - |
dc.contributor.nonIdAuthor | Song, Jae-Ho | - |
dc.contributor.nonIdAuthor | Song, Jung-Hoon | - |
dc.contributor.nonIdAuthor | Hong, Sun Ig | - |
dc.contributor.nonIdAuthor | Yao, Takafumi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Characterization | - |
dc.subject.keywordAuthor | Oxides | - |
dc.subject.keywordAuthor | Zinc compounds | - |
dc.subject.keywordAuthor | Semiconductiong II-VI materials | - |
dc.subject.keywordPlus | HOMOEPITAXIAL GROWTH | - |
dc.subject.keywordPlus | 11(2)OVER-BAR-0 FILMS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | LAYER | - |
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