Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

Abstract

TiO2 films were deposited via plasma-enhanced atomic layer deposition on an Ir electrode. The phase of the TiO2 films on the Ir electrode were changed from anatase to anatase and rutile multiphases with oxygen plasma time due to oxidation of Ir surface to IrO2, resulting in the increase of dielectric constant (from 50 to 83). In order to improve the rutile crystallinity, IrO2 seed layer was formed by annealing at 600 S C for 10 min in ambient oxygen before TiO2 films deposition. As a result, the rutile crystallinity of TiO2 films was enhanced and its dielectric constant increased to 90. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3059060] All rights reserved.