DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, YB | ko |
dc.contributor.author | Kim, JU | ko |
dc.contributor.author | Choi, DK | ko |
dc.contributor.author | Hong, JM | ko |
dc.contributor.author | Kim, Il-Doo | ko |
dc.date.accessioned | 2013-03-09T17:51:41Z | - |
dc.date.available | 2013-03-09T17:51:41Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, v.23, pp.76 - 79 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | http://hdl.handle.net/10203/97046 | - |
dc.description.abstract | We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6 x 10(-9) A/cm, as compared to a current density of 5 x 10(-4) A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm(2) V/s, 1.2 x 10(6), and 0.21 V/dec respectively. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | CHANNEL | - |
dc.title | Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator | - |
dc.type | Article | - |
dc.identifier.wosid | 000268772500013 | - |
dc.identifier.scopusid | 2-s2.0-71449098250 | - |
dc.type.rims | ART | - |
dc.citation.volume | 23 | - |
dc.citation.beginningpage | 76 | - |
dc.citation.endingpage | 79 | - |
dc.citation.publicationname | JOURNAL OF ELECTROCERAMICS | - |
dc.identifier.doi | 10.1007/s10832-008-9538-7 | - |
dc.contributor.localauthor | Kim, Il-Doo | - |
dc.contributor.nonIdAuthor | Kim, YB | - |
dc.contributor.nonIdAuthor | Kim, JU | - |
dc.contributor.nonIdAuthor | Choi, DK | - |
dc.contributor.nonIdAuthor | Hong, JM | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Transistor | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Low voltage operation | - |
dc.subject.keywordAuthor | Gate insulator | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | CHANNEL | - |
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