Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Jun-Hyuck | ko |
| dc.contributor.author | Hwang, Young-Hwan | ko |
| dc.contributor.author | Bae, Byeong-Soo | ko |
| dc.date.accessioned | 2013-03-09T16:20:22Z | - |
| dc.date.available | 2013-03-09T16:20:22Z | - |
| dc.date.created | 2012-05-15 | - |
| dc.date.created | 2012-05-15 | - |
| dc.date.issued | 2012 | - |
| dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.4, pp.123 - 125 | - |
| dc.identifier.issn | 1099-0062 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/96844 | - |
| dc.description.abstract | Novel fluorine doped zinc tin oxide (ZTO:F) thin-film transistor (TFT) was fabricated by an aqueous sol-gel method and their bias-temperature-illumination stability were observed. ZTO:F TFT optimized at Sn:Zn = 1:1 composition exhibits high field-effect mobility of 11.52 cm(2)/V.s at a process temperature of 350 degrees C. In particular, the TFT displays a small negative threshold voltage shift of approximately 1 V under positive bias-temperature-illumination stress. This is attributed to asymmetry of the recombination for photo-generated holes with the free electrons at the ZTO:F channel/gate dielectric interface due to the substitution of oxygen by fluorine with different electrovalence. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.004205esl] All rights reserved. | - |
| dc.language | English | - |
| dc.publisher | ELECTROCHEMICAL SOC INC | - |
| dc.subject | THIN-FILM TRANSISTORS | - |
| dc.subject | PERFORMANCE | - |
| dc.subject | PASSIVATION | - |
| dc.title | Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000300215100029 | - |
| dc.identifier.scopusid | 2-s2.0-84857243729 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 15 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 123 | - |
| dc.citation.endingpage | 125 | - |
| dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
| dc.identifier.doi | 10.1149/2.004205esl | - |
| dc.contributor.localauthor | Bae, Byeong-Soo | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | PASSIVATION | - |
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