DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, K. H. | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kwon, Y. H. | ko |
dc.contributor.author | Ryu, S. Y. | ko |
dc.contributor.author | Kang, T. W. | ko |
dc.contributor.author | Yoo, C. H. | ko |
dc.contributor.author | Lee, D. U. | ko |
dc.contributor.author | Kim, T. W. | ko |
dc.date.accessioned | 2013-03-09T11:02:16Z | - |
dc.date.available | 2013-03-09T11:02:16Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, v.311, no.2, pp.244 - 248 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/10203/96158 | - |
dc.description.abstract | X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (111) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {(1) over bar1 0 0}, {(1) over bar1 0 2}, and {(1) over bar 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone. (C) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | NANOWIRES | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | DEPOSITION | - |
dc.title | Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | 000263700300005 | - |
dc.identifier.scopusid | 2-s2.0-58749089445 | - |
dc.type.rims | ART | - |
dc.citation.volume | 311 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 244 | - |
dc.citation.endingpage | 248 | - |
dc.citation.publicationname | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Kwon, Y. H. | - |
dc.contributor.nonIdAuthor | Ryu, S. Y. | - |
dc.contributor.nonIdAuthor | Kang, T. W. | - |
dc.contributor.nonIdAuthor | Yoo, C. H. | - |
dc.contributor.nonIdAuthor | Lee, D. U. | - |
dc.contributor.nonIdAuthor | Kim, T. W. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Hydride vapor phase epitaxy | - |
dc.subject.keywordAuthor | Nanomaterials | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
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