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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3

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dc.contributor.authorPark, J. S.ko
dc.contributor.authorGoto, T.ko
dc.contributor.authorHong, S. K.ko
dc.contributor.authorLee, S. H.ko
dc.contributor.authorLee, J. W.ko
dc.contributor.authorMinegishi, T.ko
dc.contributor.authorPark, S. H.ko
dc.contributor.authorChang, J. H.ko
dc.contributor.authorOh, D. C.ko
dc.contributor.authorLee, JeongYongko
dc.contributor.authorYao, T.ko
dc.date.accessioned2013-03-09T06:21:42Z-
dc.date.available2013-03-09T06:21:42Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-04-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.94, no.14-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/95579-
dc.description.abstractWe report the structural and optical properties of one-dimensional grating of ZnO consisting of periodically polarity inverted structures on (0001) Al2O3 substrates. The inversion domain boundaries (IDBs) between the Zn- and the O-polar ZnO regions were clearly observed by transmission electronic microscopy. The investigation of spatially resolved local photoluminescence (PL) revealed strong excitonic emission at the interfacial region including the IDBs. The possible mechanism of strong PL has been discussed by the consideration of atomic configuration and carrier collection including its lifetime and diffusion process in Zn- and O-polar regions. Therefore the authors conclude that the IDBs can be active for the strong emission not a nonradiative center.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectINVERSION DOMAIN BOUNDARIES-
dc.subjectTHIN-FILMS-
dc.subjectGENERATION-
dc.subjectGAN-
dc.subjectFABRICATION-
dc.titleStructural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3-
dc.typeArticle-
dc.identifier.wosid000265083700017-
dc.identifier.scopusid2-s2.0-64349084492-
dc.type.rimsART-
dc.citation.volume94-
dc.citation.issue14-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3114989-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorPark, J. S.-
dc.contributor.nonIdAuthorGoto, T.-
dc.contributor.nonIdAuthorHong, S. K.-
dc.contributor.nonIdAuthorLee, S. H.-
dc.contributor.nonIdAuthorMinegishi, T.-
dc.contributor.nonIdAuthorPark, S. H.-
dc.contributor.nonIdAuthorChang, J. H.-
dc.contributor.nonIdAuthorOh, D. C.-
dc.contributor.nonIdAuthorYao, T.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoraluminium compounds-
dc.subject.keywordAuthorcarrier lifetime-
dc.subject.keywordAuthordiffusion-
dc.subject.keywordAuthordomain boundaries-
dc.subject.keywordAuthorII-VI semiconductors-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorsemiconductor heterojunctions-
dc.subject.keywordAuthorsemiconductor thin films-
dc.subject.keywordAuthortransmission electron microscopy-
dc.subject.keywordAuthorwide band gap semiconductors-
dc.subject.keywordAuthorzinc compounds-
dc.subject.keywordPlusINVERSION DOMAIN BOUNDARIES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusFABRICATION-
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